 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 2N3866A Silicon NPN Transistor Data Sheet Description Semicoa Semiconductors offers: * Screening and processing per MIL-PRF-19500 Appendix E * JAN level (2N3866AJ) * JANTX level (2N3866AJX) * JANTXV level (2N3866AJV) * JANS level (2N3866AJS) * QCI to the applicable level * 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS * Radiation testing (total dose) upon request Applications * General purpose high frequency * VHF-UHF amplifier transistor * NPN silicon transistor Features * * * * Hermetically sealed TO-39 metal can Also available in chip configuration Chip geometry 1008 Reference document: MIL-PRF-19500/398 Benefits Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 * Qualification Levels: JAN, JANTX, JANTXV and JANS * Radiation testing available TC = 25C unless otherwise specified Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Dissipation, TA = 25C Derate linearly above 25C Power Dissipation, TC = 25C Derate linearly above 25C Thermal Resistance Operating Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC PT PT Rating 30 60 3.5 400 1 5.71 2.9 16.6 60 -65 to +200 Unit Volts Volts Volts mA W mW/C W mW/C C/W C RJC TJ TSTG Copyright 2002 Rev. F Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2 www.SEMICOA.com 2N3866A Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25C Off Characteristics Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Cutoff Current Collector-Emitter Cutoff Current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICEO ICES1 ICES2 Test Conditions IC = 100 A IC = 5 mA IE = 100 A VCE = 28 Volts VCE = 55 Volts VCE = 55 Volts, TA = 150C Min 60 30 3.5 20 100 2 Typ Max Units Volts Volts Volts A A mA On Characteristics Parameter DC Current Gain Collector-Emitter Saturation Voltage Dynamic Characteristics Parameter Magnitude - Common Emitter, Short Circuit Forward Current Transfer Ratio Open Circuit Output Capacitance Collector Efficiency Power Output Symbol |hFE| COBO 1 2 P1out P1out Test Conditions VCE = 15 Volts, IC = 50 mA, f = 200 MHz VCB = 28 Volts, IE = 0 mA, Symbol hFE1 hFE2 hFE3 VCEsat1 Test Conditions IC = 50 mA, VCE = 5 Volts IC = 360 mA, VCE = 5 Volts IC = 50 mA, VCE = 5 Volts TA = -55C IC = 100 mA, IB = 10 mA Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% Min 25 8 12 Typ Max 200 Units 1 Volts Min 4 Typ Max 7.5 3.5 Units pF % VCC = 28 Volts, f = 400 MHz Pin = 0.15 W Pin = 0.075 W VCC = 28 Volts, f = 400 MHz Pin = 0.15 W Pin = 0.075 W 45 40 1.0 0.5 2 Watts Copyright 2002 Rev. F Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2 www.SEMICOA.com |
Price & Availability of 2N3866A02
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |